Accurate evaluation of specific contact resistivity of multi-layered silicon-based ohmic contacts

Advancements in nanotechnology have created the need for efficient means of communication of electrical signals to nanostructu res, which can be addressed using low resistance contacts. In order to study and estimate the resistance of such contacts or the resistance posed by the interface(s) in such contacts, standardised test structures and accurate evaluation techniques need to be used. The resistance posed by an interface is quantified using its specific contact resistivity (SCR), and while multiple techniques have been utilised, inaccuracies of such techniques in measuring values of SCR lesser than 10'8 ncm2 have been reported. This chapter presents the experimental validation for a new technique for accurate evaluation of low values of SCR, with the ohmic contacts using relevant silicide th in fi lms (titanium silicide TiSi2 and nickel silicide NiSi). Experimental data for alumi nium (AI) to TiSi2 ohmic contacts and AI/NiSi/doped silicon ohmic contacts are presented.