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Hydrogen gas sensing performance of a Pt/graphene/SiC device

conference contribution
posted on 2024-10-31, 15:49 authored by Mahnaz Shafiei, Koo Shin, Jerry Yu, Seung Han, JW Jong, Nunzio Motta, Johan Du Plessis, Wojciech WlodarskiWojciech Wlodarski
In this work, we present the development of a Pt/graphene/SiC device for hydrogen gas sensing. A single layer of graphene was deposited on 6H-SiC via chemical vapor deposition. The presence of graphene C-C bonds was observed via X-ray photoelectron spectroscopy analysis. Current-voltage characteristics of the device were measured at the presence of hydrogen at different temperatures, from 25°C to 170°C. The dynamic response of the device was recorded towards hydrogen gas at an optimum temperature of 130°C. A voltage shift of 191 mV was recorded towards 1% hydrogen at -1 mA constant current.

History

Related Materials

  1. 1.
    DOI - Is published in 10.1109/TRANSDUCERS.2011.5969235
  2. 2.
    ISBN - Is published in 9781457701566 (urn:isbn:9781457701566)

Start page

170

End page

173

Total pages

4

Outlet

Proceedings of the16th International Solid-State Sensors, Actuators and Microsystems Conference, Transducers'11

Editors

Shanhong Xia, Minhang Bao, Long-Sheng Fan

Name of conference

16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Publisher

IEEE

Place published

United States

Start date

2011-06-05

End date

2011-06-09

Language

English

Copyright

© 2011 IEEE

Former Identifier

2006031296

Esploro creation date

2020-06-22

Fedora creation date

2019-09-23

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    Scholarly Works

    Categories

    Keywords

    Chemical Vapor Deposition.GrapheneHydrogenSensor

    Licence

    All rights reserved

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