Nickel germanide formation via solid phase epitaxial regrowth of amorphous germanium

Johnson, B; Leong, M; Kandasamy, S; Holland, Anthony; McCallum, J

Nickel germanide formation via solid phase epitaxial regrowth of amorphous germanium

conference contribution

posted on 2024-10-31, 10:29 authored by B Johnson, M Leong, S Kandasamy, Anthony HollandAnthony Holland, J McCallum

The effect of Ni on the kinetics of solid phase epitaxial re-crystallization of amorphous germanium films is investigated with Raman spectroscopy. Both Ni implantation and deposition are employed.

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1.
DOI - Is published in 10.1109/COMMAD.2010.5699719
2.
ISBN - Is published in 9781424473328 (urn:isbn:9781424473328)

Start page

165

End page

166

Total pages

2

Outlet

2010 Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD 2010 Proceedings

Editors

A/Prof. Hark Hoe Tan

Name of conference

2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010)

Publisher

IEEE

Place published

New Jersey, USA

Start date

2010-12-12

End date

2010-12-15

Language

English

Copyright

Former Identifier

2006026031

Esploro creation date

2020-06-22

Fedora creation date

2011-11-13

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Nickel germanide formation via solid phase epitaxial regrowth of amorphous germanium

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Outlet

Editors

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