Pt/SnO2 nanowires/SiC based hydrogen gas sensor
conference contribution
posted on 2024-11-23, 02:10 authored by Mahnaz Shafiei, Wojciech WlodarskiWojciech Wlodarski, Kourosh Kalantar ZadehKourosh Kalantar Zadeh, E. Comini, Salvadore Bianchi, G. SberveglieriPt/SnO<sub>2</sub> nanowires/SiC based metal-oxide-semiconductor (MOS) devices were fabricated and tested for their gas sensitivity towards hydrogen. Tin oxide (SnO<sub>2</sub>) nanowires were grown on SiC substrates by the vapour liquid solid growth process. The material properties of the SnO<sub>2</sub> nanowires such as its formation and dimensions were analyzed using scanning electron microscopy (SEM). The current-voltage (I-V) characteristics at different hydrogen concentrations are presented. The effective change in the barrier height for 0.06 and 1% hydrogen were found to be 20.78 and 131.59 meV, respectively. A voltage shift of 310 mV at 530degC for 1% hydrogen was measured.
History
Related Materials
- 1. ISBN - Is published in 9781424412617 (urn:isbn:9781424412617)
Start page
166End page
169Total pages
4Outlet
IEEE Sensors 2007Editors
Boris MizaikoffName of conference
The 6th IEEE Conference on Sensors, IEEE Sensors 2007Publisher
IEEEPlace published
USAStart date
2007-10-28End date
2007-10-31Language
EnglishCopyright
© 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.Former Identifier
2006007547Esploro creation date
2020-06-22Fedora creation date
2009-04-08Open access
- Yes
