Enhanced tunability of magnetron sputtered Ba0.5Sr 0.5TiO3 thin films on c-plane sapphire substrates

Thin films of Ba0.5Sr0.5TiO3 (BST) were deposited on c-plane (0001) sapphire by rf magnetron sputtering and investigated by complementary materials analysis methods. Microwave properties of the films, including tunability and Q factor were measured from 1 to 20 GHz by patterning interdigital capacitors (IDCs) on the film surface. The tunability is correlated with texture, strain, and grain size in the deposited films. An enhanced capacitance tunability of 56% at a bias field of 200 kV/cm and total device Q of more than 15 (up to 20 GHz) were achieved following postdeposition annealing at 900 degrees C.