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Etching of lithium niobate using standard Ti indiffusion technique

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posted on 2024-11-23, 07:08 authored by Vijay Sivan, Arnan MitchellArnan Mitchell, Lam Bui, Anthony HollandAnthony Holland, Suresh BhargavaSuresh Bhargava
We present evidence of etching LiNbO3 when annealing two wafers in contact with an intermediate Ti strip. Etched features are characterized qualitatively using atomic force microscopy. The impact of the Ti strip thickness on the depth and roughness of the etched surface is quantified. Etched trenches of similar depths to the original Ti film are achieved with very smooth etched surface.

History

Journal

Applied Physics Letters

Volume

91

Start page

231921-1

End page

231921-3

Total pages

3

Publisher

American Institute of Physics

Place published

USA

Language

English

Copyright

© 2007 American Institute of Physics.

Former Identifier

2006007407

Esploro creation date

2020-06-22

Fedora creation date

2009-09-01

Open access

  • Yes

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