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Field emission current from a junction field-effect transistor

journal contribution
posted on 2024-11-02, 13:25 authored by Mahta Monshipouri, Yaser Abdi
Fabrication of a titanium dioxide/carbon nanotube (TiO2/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO2/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO2/CNT hetero-structure is also investigated, and well modeled.

History

Journal

Journal of Nanoparticle Research

Volume

17

Number

169

Issue

4

Start page

1

End page

8

Total pages

8

Publisher

Springer Netherlands

Place published

Netherlands

Language

English

Copyright

© Springer Science+Business Media Dordrecht 2015

Former Identifier

2006100255

Esploro creation date

2020-09-08

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