Ga2O3/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

The broad-band ultraviolet (BBUV) photodetectors (PDs) responding to multiple ultraviolet (UV) wavelengths (230-400 nm) have received considerable attention in various fields, such as missile warnings, fire alarms, astronomical imaging, etc. Due to increased demand for BBUVPDs, there is a need for energy-efficient self-driven devices. This work used a simple thermal oxidation process to develop a β-Ga2O3/GaN heterointerface-based device that shows ultrahigh performance in self-driven, low bias, and spectrally broad responsive range. The fabricated device exhibits excellent stable performance in the self-driven mode of operation with an ultrahigh responsivity of 1.2 × 103mA W-1and a very high external quantum efficiency of 3.8 × 102% under 266 nm light illumination. Further, the performance of the fabricated device in the photoconductive mode (@5 V) displays an ultrahigh responsivity of 2.21 × 105mA W-1, a very low noise equivalent power of 10-14W Hz-1/2, and a very high external quantum efficiency of 104%. Furthermore, the device responds to the illumination wavelength of 355 nm, with a responsivity of 0.74 mA W-1(2.2 × 104mA W-1) at a 0 V (5 V) applied bias. The study will boost the prospects for creating next-generation optoelectronic devices to comprehend and utilize Ga2O3/GaN heterointerface devices.