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GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator

journal contribution
posted on 2024-11-02, 13:01 authored by Zheng Chai, Pedro Freitas, Wei Shao, Flora SalimFlora Salim
In this paper, we propose and demonstrate a novel technique for true random number generator (TRNG) application using GeSe-based Ovonic threshold switching (OTS) selector devices. The inherent variability in OTS threshold voltage results in a bimodal distribution of on/off states which can be easily converted into digital bits. The experimental evaluation shows that the proposed TRNG enables the generation of high-quality random bits that passed 12 tests in the National Institute of Standards and Technology statistical test suite without complex external circuits for post-processing. The randomness is further evidenced by the prediction rate of ∼50% using machine learning algorithm. Compared with the TRNGs based on non-volatile memories, the volatile nature of OTS avoids the reset operation, thus further simplifying the operation and improving the generation frequency.

History

Related Materials

  1. 1.
    DOI - Is published in 10.1109/LED.2019.2960947
  2. 2.
    ISSN - Is published in 07413106

Journal

IEEE Electron Device Letters

Volume

41

Number

8936961

Issue

2

Start page

228

End page

231

Total pages

4

Publisher

Institute of Electrical and Electronics Engineers

Place published

United States

Language

English

Copyright

© 1980-2012 IEEE.

Former Identifier

2006100176

Esploro creation date

2020-09-08

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