Heteroepitaxy crystallography in low dimensional nanostructures

Low dimensional nanostructures, e.g. nanowires, self-assembled through heteroepitaxy, present a variety of crystallographic features that do not always follow conventional V-W or S-K growth mode. Applying Delta g parallelism rules and edge-to-edge matching (E2EM) model in beta-DySi2/Si and CoSi2/Si systems provides a better understanding of the natural preference of the interface orientation and the orientation relationship (OR) during heteroepitaxial growth. This may help improving the quality of nanowires through optimizing the substrate orientation.