Interfacial reaction behavior and evolution mechanism at a preoxidized SiCox/Al interface

The primary problem that must be overcome when preparing high-performance SiC/Al composites for electronic packaging is how to effectively suppress the harmful SiC/Al interfacial reaction and thereby optimize interface bonding. Preoxidation of the SiC surface is an efficient and widely used method for this purpose. In this study, impregnation and inconsecutive oxidation methods were used to investigate the interfacial reaction between pure Al and SiC that was preoxidized under different conditions. The thickness of the oxide film that formed on the surface of SiC increased when the oxidation temperature was increased or when the oxidation time was extended. The protection of the oxide film isolated the SiC from the molten Al, and the SiC/Al interfacial reaction was effectively suppressed. In the alloy system containing Mg, the formation ratio of Al4C3 to MgAl2O4 at the interface was related to the thickness of the oxide film. The mechanism of the interfacial reaction was analyzed to obtain a theoretical and experimental basis for the preparation of SiC/Al composites to improve their comprehensive properties.