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Memcapacitive to Memristive Transition in Al/Y2O3/GZO Crossbar Array

journal contribution
posted on 2024-11-03, 10:15 authored by Sanjay Kumar, Mohit Gautam, Saurabh Yadav, Shaibal MukherjeeShaibal Mukherjee
Here, we report both memcapacitive and memristive behaviors in a Y2O3-based crossbar array size of (4 × 4), which is fabricated by utilizing dual ion beam sputtering (DIBS) system. The fabricated crossbar array shows the memcapacitive behavior under the application of lower input voltage, while under the comparatively higher input voltage, it shows memristive behavior in switching response. Moreover, the transition from memcapacitive to memristive behavior is stable and reversible in nature and depends on the amplitude of the applied input voltage. The crossbar array devices show stable switching response in multiple switching cycles, excellent endurance (80 000 cycles) and retention (12 × 103 s) properties, low device-to-device (D2D), and cycle-to-cycle (C2C) variabilities in device switching voltages, i.e., VSET and VRESET. The synaptic functionalities are demonstrated in terms of potentiation (P) and depression (D) mechanisms and achieve least value of nonlinearity factor, i.e., 0.05 under the lower input voltage (1 V), wherein memcapacitive behavior is dominated.

History

Journal

IEEE Transactions on Electron Devices

Volume

70

Issue

6

Start page

3341

End page

3346

Total pages

6

Publisher

IEEE

Place published

United States

Language

English

Copyright

© 2023 IEEE

Former Identifier

2006124419

Esploro creation date

2023-08-11

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