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Memristive device fundamentals and modeling: applications to circuits and systems simulation

journal contribution
posted on 2024-11-01, 16:47 authored by Kamran Eshraghian, Omid Kavehei, Kyoung-Rok Cho, James Chappell, Azhar Iqbal, Said Al-Sarawi, Derek Abbott
The nonvolatile memory property of a memristor enables the realization of new methods for a variety of computational engines ranging from innovative memristive-based neuromorphic circuitry through to advanced memory applications. The nanometer-scale feature of the device creates a new opportunity for realization of innovative circuits that in some cases are not possible or have inefficient realization in the present and established design domain. The nature of the boundary, the complexity of the ionic transport and tunneling mechanism, and the nanoscale feature of the memristor introduces challenges in modeling, characterization, and simulation of future circuits and systems. Here, a deeper insight is gained in understanding the device operation, leading to the development of practical models that can be implemented in current computer-aided design (CAD) tools

History

Related Materials

  1. 1.
    DOI - Is published in 10.1109/JPROC.2012.2188770
  2. 2.
    ISSN - Is published in 00189219

Journal

Proceedings of the Institute of Electrical and Electronics Engineers (IEEE)

Volume

100

Issue

6

Start page

1991

End page

2007

Total pages

17

Publisher

IEEE

Place published

United States

Language

English

Copyright

© 2012 IEEE

Former Identifier

2006048116

Esploro creation date

2020-06-22

Fedora creation date

2015-01-19

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