Oxygen-deficient strontium titanate based stretchable resistive memories

A stretchable non-volatile resistive memory is a fundamental element in realizing complex neuromor-phic computing and compact logic application adaptable to wearable electronics. A room temperaturedeposited SrTiO3-x(STO) based resistive memory on stretchable polydimethylsiloxane (PDMS) substratehas been developed. The STO-based resistive memory does not require energy-intensive electroforming,exhibits stable complementary switching, long retention time, and reproducible endurance switching.The devices demonstrate the ability to operate under uniaxial tensile strain and extreme bending con-ditions. This work is an important step realizing metal oxide based stretchable non-volatile memories,critical to integrated devices for skin-mounted electronics.