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P- and n-type Fe-doped SnO2 gas sensors fabricated by the mechanochemical processing technique

journal contribution
posted on 2024-10-31, 23:51 authored by Kosmas Galatsis, L Cukrov, Wojciech WlodarskiWojciech Wlodarski, Malcolm McCormick, Kourosh Kalantar ZadehKourosh Kalantar Zadeh, E. Comini, G. Sberveglieri
Fe-doped SnO2 sensors were fabricated using micromechanical synthesis technique. The Fe-doped sensor was compared to pure SnO2. Fe-doped SnO2 responded as a p-type semiconductor to oxygen concentrations of up to 10% at 300 °C. As the temperature increased to 400°C, the material responded as an n-type semiconductor. Furthermore, a higher surface area and smaller grains size diameters were achieved when doping SnO2 with Fe. This translated into improved dynamic gas sensing properties and also improved responses to gases such as ethanol.

History

Related Materials

  1. 1.
    DOI - Is published in 10.1016/S0925-4005(03)00233-8
  2. 2.
    ISSN - Is published in 09254005

Journal

Sensors and Actuators B

Volume

93

Issue

1-3

Start page

562

End page

565

Total pages

4

Publisher

Elsevier S.A.

Place published

Lausanne

Language

English

Copyright

Copyright © 2003 Elsevier Science B.V. All rights reserved.

Former Identifier

2003002198

Esploro creation date

2020-06-22

Fedora creation date

2009-07-21

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