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Reaction paths of phosphine dissociation on silicon (001)

journal contribution
posted on 2024-11-02, 00:08 authored by Oliver Warschkow, Neil Curson, Steven Schofield, Nigel Marks, Hugh Wilson, Marion Radny, Phillip Smith, Thilo Reusch, D McKenzie, Michelle Simmons
Using density functional theory and guided by extensive scanning tunneling microscopy (STM) image data, we formulate a detailed mechanism for the dissociation of phosphine (PH3) molecules on the Si(001) surface at room temperature. We distinguish between a main sequence of dissociation that involves PH2+H, PH+2H, and P+3H as observable intermediates, and a secondary sequence that gives rise to PH+H, P+2H, and isolated phosphorus adatoms. The latter sequence arises because PH2 fragments are surprisingly mobile on Si(001) and can diffuse away from the third hydrogen atom that makes up the PH3 stoichiometry. Our calculated activation energies describe the competition between diffusion and dissociation pathways and hence provide a comprehensive model for the numerous adsorbate species observed in STM experiments.

History

Related Materials

  1. 1.
    DOI - Is published in 10.1063/1.4939124
  2. 2.
    ISSN - Is published in 00219606

Journal

Journal of Chemical Physics

Volume

144

Number

14705

Issue

1

Start page

1

End page

17

Total pages

17

Publisher

American Institute of Physics Inc.

Place published

United States

Language

English

Copyright

© 2016 AIP Publishing LLC

Former Identifier

2006059109

Esploro creation date

2020-06-22

Fedora creation date

2016-03-11

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