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Structural transformation of implanted diamond layers during high temperature annealing

journal contribution
posted on 2024-11-02, 00:15 authored by Sergey Rubanov, Barbara Fairchild, A Suvorova, Paolo Olivero, Steven Prawer
In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond-air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.

History

Journal

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volume

365

Start page

50

End page

54

Total pages

5

Publisher

Elsevier

Place published

Netherlands

Language

English

Copyright

© 2015 Published by Elsevier B.V. All rights reserved.

Former Identifier

2006059162

Esploro creation date

2020-06-22

Fedora creation date

2016-03-04

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