Thin films of unintentionally doped n-type titania have been energetically deposited from a filtered cathodic vacuum arc. All films were dense, smooth, and transparent with crystallinity depending on the deposition/annealing temperature. At a growth temperature of 600 degrees C, the preferred phase could be changed from rutile to anatase by increasing the oxygen process pressure thereby reducing dynamic annealing. Pt/TiOx/Pt ultraviolet detectors exhibiting rectifying current-voltage characteristics and ultraviolet-visible rejection ratios exceeding 10(4):1 were formed on selected films.